PART |
Description |
Maker |
FDMS2672 |
N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFP240 IRFP250NPBF IRFP240PBF |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=20A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)\u003d 0.18ohm,身份证\u003d 20A条) HEXFET? Power MOSFET 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|
S20WB20 |
Bridge Diode(200V 20A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
WSAD92-02 |
20A,200V Ultrafast Dual Diode
|
WINSEMI SEMICONDUCTOR COMPANY LIMITED
|
2SK2560 |
VZ Series Power MOSFET(200V 20A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
SF20A200HPR |
200V, 20A ULTRAFAST DUAL RECTIFIERS
|
KODENSHI KOREA CORP.
|
FDD8424HF085A13 |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
|
Fairchild Semiconductor
|
MBR20200CTP |
Dual Schottky Barrier Power Rectifier(20A,200V????瑰??垮?????存???
|
ON SEMICONDUCTOR
|
FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m N-Channel MOSFET 200V, 18A, 0.14楼? N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|